N-face GaN(000(1)over-bar) films grown by group-III-source flow-rate modulation epitaxy

被引：4
|
作者：
Lin, Chia-Hung [1 ]
Akasaka, Tetsuya [1 ]
Yamamoto, Hideki [1 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 11期
关键词：
C-PLANE SAPPHIRE; MIGRATION-ENHANCED EPITAXY; LIGHT-EMITTING-DIODES; GAN; GAAS; LAYER; HETEROSTRUCTURES; POLAR; MODE; ALN;
D O I：
10.7567/JJAP.53.11RC01
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
N-face GaN(000 (1) over bar) films were grown on sapphire substrates with a very small misorientation angle (0.15 degrees) by flow-rate modulation epitaxy (FME). We investigated two types of FME: FME in which Ga precursor with flow rate of 2.08 x 10(-5) mol/min is intermittently supplied (intermittent supply of group-III-source FME) and in which Ga precursors with flow rates of 2.08 x 10(-5) and 1.04 x 10(-5) mol/min are alternately supplied (group-IIIsource FME). Etching of GaN films is effectively suppressed in group-III-source FME, while the etching significantly impedes the growth rate in intermittent supply of group-III-source FME. Group-III-source FME promotes surface migration of Ga adatoms, thus terminating the formation of hillocks on N-face GaN(000 (1) over bar) surfaces. (C) 2014 The Japan Society of Applied Physics
引用
收藏
页数：4
相关论文
共 7 条
  • [1] N-face GaN(000(1)over-bar) films with hillock-free smooth surfaces grown by group-III-source flow-rate modulation epitaxy
    Lin, Chia-Hung
    Akasaka, Tetsuya
    Yamamoto, Hideki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)
  • [2] Nucleus and Spiral Growth of N-face GaN(000(1)over-bar) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
    Lin, Chia-Hung
    Akasaka, Tetsuya
    Yamamoto, Hideki
    APPLIED PHYSICS EXPRESS, 2013, 6 (03)
  • [3] Control of impurity concentration in N-polar (000(1)over-bar) GaN grown by metalorganic vapor phase epitaxy
    Tanikawa, Tomoyuki
    Kuboya, Shigeyuki
    Matsuoka, Takashi
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2017, 254 (08):
  • [4] Recent progress in metal-organic chemical vapor deposition of (000(1)over-bar) N-polar group-III nitrides
    Keller, Stacia
    Li, Haoran
    Laurent, Matthew
    Hu, Yanling
    Pfaff, Nathan
    Lu, Jing
    Brown, David F.
    Fichtenbaum, Nicholas A.
    Speck, James S.
    DenBaars, Steven P.
    Mishra, Umesh K.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (11)
  • [5] Suppression of metastable-phase inclusion in N-polar (000(1)over-bar) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy
    Shojiki, Kanako
    Choi, Jung-Hun
    Iwabuchi, Takuya
    Usami, Noritaka
    Tanikawa, Tomoyuki
    Kuboya, Shigeyuki
    Hanada, Takashi
    Katayama, Ryuji
    Matsuoka, Takashi
    APPLIED PHYSICS LETTERS, 2015, 106 (22)
  • [6] Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar)
    Zhang, Hengfang
    Chen, Jr. -Tai
    Papamichail, Alexis
    Persson, Ingemar
    Tran, Dat Q.
    Paskov, Plamen P.
    Darakchieva, Vanya
    JOURNAL OF CRYSTAL GROWTH, 2025, 651
  • [7] Red to blue wavelength emission of N-polar (000(1)over-bar) lnGaN light-emitting diodes grown by metalorganic vapor phase epitaxy
    Shojiki, Kanako
    Tanikawa, Tomoyuki
    Choi, Jung-Hun
    Kuboya, Shigeyuki
    Hanada, Takashi
    Katayama, Ryuji
    Matsuoka, Takashi
    APPLIED PHYSICS EXPRESS, 2015, 8 (06)
1