Optimum diode geometry in a two-dimensional photovoltaic array

被引:13
作者
Dhar, V [1 ]
Gopal, V [1 ]
机构
[1] Solid State Phys Lab, Delhi 110054, India
关键词
detector arrays; quantum efficiency; crosstalk; infrared; photodiode;
D O I
10.1117/1.1303763
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The quantum efficiency and the crosstalk of a photodiode in a long wavelength IR (LWIR) 2-D diode array are studied by numerically solving the 2-D diffusion equation of photocarriers in an array environment. The quantum efficiency depends strongly on both the diode size and the junction depth, and can be expressed, to good accuracy, as a quadratic function of the two variables. The results, corresponding to HgCdTe n(+)-on-p backside illuminated photovoltaic (PV) diodes, are compared with published Monte Carlo results and with analytical (1-D) special cases. For a given pitch, smaller diodes have lower crosstalk, but also lower quantum efficiency This implies an optimal diode size. The highest quantum efficiency is obtained for low junction depths (less than or equal to 1 mu m), and the optimum diode size, maximizing the quantum efficiency and minimizing the crosstalk, lies in the range of 15 to 30 mu m for a pitch of 50 mu m over a wide range of diffusion lengths. The quantum efficiency depends weakly on the pitch, for a given ratio of diode size to the pitch. (C) 2000 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(00)02907-X].
引用
收藏
页码:2022 / 2030
页数:9
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