Current-accelerated channel hot carrier stress of MOS transistors

被引：8

作者：

Sah, CT ^{[1
]}

Neugroschel, A ^{[1
]}

Han, KM ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Florida Solid State Elect Lab, Gainesville, FL 32611 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 02期

关键词：

D O I：

10.1049/el:19980194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A channel hot carrier current and the failure rate of n- and p-channel MOS transistors are both increased by one to two orders of magnitude by forward biasing the substrate or source pin junction. Correlations with the hydrogen-bond-breaking theory give a threshold kinetic energy of 3.06 +/- 0.05eV for interface trap generation by hot carriers.

引用

页码：217 / 219

页数：3

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