E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability

被引：0

作者：

Wang, Chengcai ^{[1
]}

Hua, Mengyuan ^{[1
]}

Yang, Song ^{[2
]}

Zhang, Li ^{[2
]}

Chen, Kevin J. ^{[2
]}

机构：

[1] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China

来源：

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年

基金：

中国国家自然科学基金;

关键词：

GaN; E-mode; p-GaN; high electron mobility Transistor (HEMT); time dependent gate breakdown (TDGB); INJECTION;

D O I：

10.1109/ispsd46842.2020.9170039

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

in this work, we investigate the gate reliability of E-mode p-n junction gate (PNJ) HEMT, which features an n-GaN/p-GaN/AlGaN/GaN gate stack. Both electric-field and thermal-accelerated time-dependent gate breakdown (TDGB) tests were conducted on the PNJ-HEMTs with constant voltage stress (CVS). Compared with the Schottky-junction p-GaN gate HEMT (SJ-HEMT), the PNJ-HEMT delivers lower gate leakage, larger gate swing and longer TDDB lifetime. The estimated maximum applicable VGS of PNJ-HEMT is 10 V for 10 years' lifetime at 63% failure level.

引用

页码：14 / 17

页数：4

共 17 条

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