Resistorless self-biased curvature compensated sub-1V CMOS bandgap reference

被引：0

作者：

Jaafar, Khairuddin ^{[1
]}

Kamal, Noorfazila ^{[1
]}

Reaz, Mamun Bin Ibne ^{[1
]}

Sampe, Jahariah ^{[2
]}

机构：

[1] Univ Kebangsaan Malaysia, Dept Elect Elect & Syst Engn, Bangi, Malaysia

[2] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect, Bangi, Malaysia

来源：

2016 INTERNATIONAL CONFERENCE ON ADVANCES IN ELECTRICAL, ELECTRONIC AND SYSTEMS ENGINEERING (ICAEES) | 2016年

关键词：

sub-1V CMOS bandgap reference; curvature compensated; temperature stability; voltage supply stability; resistorless; self-biased op-amp;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A Bandgap Voltage Reference (BGR) circuit technique for lower voltage supply operation is presented. It eliminates the need of BGR core and resistors by integrating a two-stage cascode operational amplifier (op-amp) biased with a start-up circuitry with all-MOSFET transistors. The circuit is designed in 0.13 mu m CMOS process technology, produced a 179mV reference voltage at 27 degrees C with 0.4V supply voltage. The simulated voltage reference achieved 0.02ppm/degrees C temperature coefficient over -60 degrees C to 45 degrees C temperature range as well as +/- 170mV over supply voltage variation from 0.1V to 1.2V. The design is simulated and verified with Mentor Graphics.

引用

页码：309 / 312

页数：4

共 16 条

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[2] 0.75 V supply nanowatt resistorless sub-bandgap curvature-compensated CMOS voltage reference
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