Correlation between the 1.5 eV photoluminescence band and peroxy linkage in silica glass

被引:14
作者
Sakurai, Y [1 ]
机构
[1] Shonan Inst Technol, Dept Elect Engn, Fujisawa, Kanagawa 2518511, Japan
关键词
D O I
10.1016/S0022-3093(00)00276-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In order to understand the origin of the 1.5 eV PL band in silica glass, we studied the correlation between the 1.5 eV PL band and the peroxy linkage (POL: O-3=Si-O-O-Si=O-3) or the molecular chlorine models (possible origins of the 3.8 eV absorption band) by laser irradiation at low temperatures (similar to 20 K). On the basis of our results, we conclude that the origin of the 1.5 eV PL band is not molecular chlorine but POL. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:159 / 162
页数:4
相关论文
共 43 条
  • [22] Correlation between the radiation-induced intrinsic 4.8 eV optical absorption and 1.9 eV photoluminescence bands in glassy SiO2
    Skuja, L
    Tanimura, T
    Itoh, N
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) : 3518 - 3525
  • [23] Effect of thermal heat treatment on oxygen-deficiency-associated defect centers: Relation to 1.8 eV photoluminescence bands in silica glass
    Sakurai, Yuryo
    1600, American Institute of Physics Inc. (95):
  • [24] Effect of thermal heat treatment on oxygen-deficiency-associated defect centers: Relation to 1.8 eV photoluminescence bands in silica glass
    Sakurai, Y
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (02) : 543 - 545
  • [25] HEAT-CAPACITIES OF A SODA SILICA AND A SODA GERMANIA GLASS BETWEEN 1.5 AND 25K
    LEADBETT.AJ
    WATERFIE.CG
    WYCHERLE.KE
    SOLID STATE COMMUNICATIONS, 1973, 13 (06) : 701 - 703
  • [26] Observation of a new photoluminescence band at 320 nm under 270 nm excitation in Ge-doped silica glass
    Garapon, J
    Poumellec, B
    Vacher, S
    Trukhin, AN
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 311 (01) : 83 - 88
  • [27] Correlation between Photoluminescence Properties of Surface Defects and Laser-Induced Damage Threshold of Fused Silica
    Chen, Qiao
    Wang, He
    Dai, Rucheng
    Wang, Zhongping
    Tao, Xiaoping
    Zhao, Wei
    Zhang, Zengming
    LASER AND PARTICLE BEAMS, 2021, 2021
  • [28] Correlation between 193nm absorption and photoluminescence-related defects for fused silica materials
    Zhou, Jiangning
    Li, Bincheng
    OPTICAL MATERIALS EXPRESS, 2018, 8 (04): : 775 - 784
  • [29] Correlation between photoluminescence and varied growth pressure of well-aligned ZnO nanorods on fused silica substrate
    Yang, Song
    Hsu, Hsu-Cheng
    Liu, Wei-Ren
    Cheng, Hsin-Min
    Hsieh, Wen-Feng
    OPTICAL MATERIALS, 2007, 30 (03) : 502 - 507
  • [30] Systematic correlation between Raman spectra, photoluminescence intensity, and absorption coefficient of silica layers containing Si nanocrystals
    Khriachtchev, L
    Räsänen, M
    Novikov, S
    Pavesi, L
    APPLIED PHYSICS LETTERS, 2004, 85 (09) : 1511 - 1513