Effect of electron irradiation on the photovoltaic characteristics of GaAs p-n junctions

被引:1
作者
Dzhafarov, TD [1 ]
Akciz, CS [1 ]
Oren, D [1 ]
机构
[1] Yildiz Tech Univ, Dept Phys, TR-80270 Istanbul, Turkey
关键词
gallium arsenide; diffusion; liquid phase epitaxy; photo voltage;
D O I
10.1016/S0040-6090(97)00722-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of electron irradiation (Phi = 5 x 10(15)-1 x 10(17) cm(-2)) on photovoltaic characteristics of epitaxial and diffusion GaAs p-n junctions is investigated depending on the directions of electron beam and diffusion flux of acceptor impurity. For conditions of coincidence of these directions, degradation of photovoltaic parameters J(SC) (short-circuit photocurrent density) and V-OC (open-circuit voltage) of p-n junctions is larger than degradation of these parameters for opposite directions. The observed results are discussed on the basis of the model of drag of atoms lions) by fast electrons (i.e., due to origin of the 'electron wind'), that is caused by direct impact and transfer of part of the electrons' impulse to the impurity atoms. This, in turn stimulates the redistribution of concentrations of impurity in the p-n junction region and therefore, changes parameters of GaAs photocells. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:327 / 330
页数:4
相关论文
共 50 条
  • [21] Characteristics of silicon p-n junction formed by ion implantation with in situ ultrasound treatment
    Melnik, VP
    Olikh, YM
    Popov, VG
    Romanyuk, BM
    Goltvyanskii, Y
    Evtukh, AA
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 327 - 330
  • [22] Effects of various dopants on properties of GaAs tunneling junctions and p-i-n solar cells
    Sodabanlu, Hassanet
    Watanabe, Kentaroh
    Sugiyama, Masakazu
    Nakano, Yoshiaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (08)
  • [23] TRAP ENHANCED CONDUCTIVITY MODULATION EFFECT IN P+-N-N+ GAAS DIODES
    MANIFACIER, JC
    ARDEBILI, R
    MOREAU, Y
    MICHEZ, A
    BORDURE, G
    ELECTRONICS LETTERS, 1995, 31 (24) : 2133 - 2134
  • [24] The fine structure of electron irradiation induced EL2-like defects in n-GaAs
    Tunhuma, S. M.
    Auret, F. D.
    Legodi, M. J.
    Diale, M.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (14)
  • [25] Numerical Simulation of P-i-n GaAs Photovoltaic Cell Using SCAPS-1D
    Azza, Mohammed
    Chahid, El Hadi
    Hmairrou, Abdellatif
    Abdia, Rachid
    Tridane, Malika
    Malaoui, Abdessamad
    Belaaouad, Said
    BIOINTERFACE RESEARCH IN APPLIED CHEMISTRY, 2023, 13 (03):
  • [26] Efficient light harvesting in hybrid CdTe nanocrystal/bulk GaAs p-i-n photovoltaic devices
    Chanyawadee, Soontorn
    Harley, Richard T.
    Taylor, David
    Henini, Mohamed
    Susha, Andrei S.
    Rogach, Andrey L.
    Lagoudakis, Pavlos G.
    APPLIED PHYSICS LETTERS, 2009, 94 (23)
  • [27] Effect of fast-neutron irradiation on the photoluminescence of n-type GaAs(Te) crystals
    Glinchuk, KD
    Prokhorovich, AV
    SEMICONDUCTORS, 1997, 31 (05) : 449 - 451
  • [28] Evaluation of the junction’s electric field and the ideality factor of GaAs p-n junction solar cells by using photoreflectance spectroscopy
    Chang Won Sohn
    Im Sik Han
    Ryan P. Smith
    Jong Su Kim
    Sam Kyu Noh
    Hyonkwang Choi
    Jae-Young Leem
    Journal of the Korean Physical Society, 2014, 64 : 1031 - 1035
  • [29] Evaluation of the Junction's Electric Field and the Ideality Factor of GaAs p-n junction Solar Cells by Using Photoreflectance Spectroscopy
    Sohn, Chang Won
    Han, Im Sik
    Smith, Ryan P.
    Kim, Jong Su
    Noh, Sam Kyu
    Choi, Hyonkwang
    Leem, Jae-Young
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 64 (07) : 1031 - 1035
  • [30] Effect of electron beam irradiation on morphology and sieving characteristics of nylon-66 membranes
    Linggawati, Amilia
    Mohammad, Abdul Wahab
    Ghazali, Zulkafli
    EUROPEAN POLYMER JOURNAL, 2009, 45 (10) : 2797 - 2804