Optimisation and regime characterisation of monolithic semiconductor mode-locked lasers and colliding-pulse mode-locked lasers at microwave and millimetre-wave frequencies

被引：8
作者：
Passerini, M
Sorel, M
Laybourn, PJR
机构：
[1] Atmel Co, Ctr Direzionale Colleoni, Agrate Brianza, MI, Italy
[2] Univ Glasgow, Elect & Elect Engn Dept, Glasgow G12 8QQ, Lanark, Scotland
来源：
IEE PROCEEDINGS-OPTOELECTRONICS | 2004年 / 151卷 / 06期
关键词：
D O I：
10.1049/ip-opt:20040845
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The optimisation of the saturable absorber section length for mode-locked ridge waveguide lasers in GaAs/AlGaAs double quantum-well material is reported. Mode-locked lasers and colliding-pulse mode-locked lasers were fabricated using a simple self-alignment process. Regime analysis and signal characterisation are performed as a function of the laser cavity and saturable absorber section lengths. Device degradation is evaluated and compared in both configurations. Device performance in the frequency domain is assessed using both an external fast photodiode and the saturable absorber section, and the direct generation of millimetre-wave signal through the saturable section is discussed.
引用
收藏
页码：508 / 512
页数：5
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