Experimental characterization of the mechanical behavior of two solder alloys for high temperature power electronics applications

被引：7

作者：

Msolli, S. ^{[1
]}

Alexis, J. ^{[1
]}

Dalverny, O. ^{[1
]}

Karama, M. ^{[1
]}

机构：

[1] Univ Toulouse, INP, ENIT, LGP, F-65013 Tarbes, France

来源：

MICROELECTRONICS RELIABILITY | 2015年 / 55卷 / 01期

关键词：

Power electronics; High temperature; Shear; Creep; Nano-indentation; Hardening;

D O I：

10.1016/j.microrel.2014.09.021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental investigation of two potential candidate materials for the diamond die attachment is presented in this framework. These efforts are motivated by the need of developing a power electronic packaging for the diamond chip. The performance of the designed packaging relies particularly on the specific choice of the solder alloys for the die/substrate junction. To implement a high temperature junction, AuGe and AlSi eutectic alloys were chosen as die attachment and characterized experimentally. The choice of the AlSi alloy is motivated by its high melting temperature T-m (577 degrees C), its practical elaboration process and the restrictions of hazardous substances (RoHS) inter alia. The AuGe eutectic solder alloy has a melting temperature (356 degrees C) and it is investigated here for comparison purposes with AlSi. The paper presents experimental results such as SEM observations of failure facies which are obtained from mechanical shear as well as cyclic nano-indentation results for the mechanical hardening/softening evaluation under cyclic loading paths. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：164 / 171

页数：8