Raman scattering studies on ZnO doped with Ga and N (codoping), and magnetic impurities

被引：53
作者：
Hasuike, N [1 ]
Fukumura, H
Harima, H
Kisoda, K
Matsui, H
Saeki, H
Tabata, H
机构：
[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan
[2] Wakayama Univ, Dept Phys, Wakayama 6408510, Japan
[3] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2004年 / 16卷 / 48期
关键词：
D O I：
10.1088/0953-8984/16/48/053
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
ZnO layers doped simultaneously with Ga and N (codoping), and magnetic elements (V, Co) were characterized by Raman scattering to study their structural stability. Five impurity modes were observed in range 200-900 cm(-1) in the doped samples, and showed characteristic variation with the doping level. It is shown that these modes can be used as a good measure of lattice defects induced by doping. The Raman spectra showed that the magnetic elements were incorporated up to 5 mol% without serious deterioration in crystallinity.
引用
收藏
页码：S5807 / S5810
页数：4
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