Optoelectronic Performance of Vertical Cavity Surface Emitting InGaAs/InP QW Laser in non-conventional orientation

Here, the optoelectronic performance of lattice matched InGaAs/InP vertical cavity surface emitting LASER is numerically simulated using MATLAB in (100), (110), (111), (113) and (131) crystal orientation by solving an eight-band k.p Hamiltonian using finite difference scheme including spin-orbit coupling. Tensor plane rotation formulae is applied to change the wave-vector k and Hamiltonian from orthodox (100) plane orientation. It is shown that there is a notable interrelationship between optical emission spectra and crystal plane orientations. The highest and lowest gains are estimated in (111) and (100) orientations with their respective peak emission wavelengths of 1770 nm and 1680 nm at the carrier injection density of 2.5 x 10(18) cm(-3). The outcome of this paper would be a stimulus to design ultra-speed optoelectronic devices with performance amelioration by using non-100 oriented epitaxial layers.