Novel integration method for III-V semiconductor devices on silicon platform

被引：26

作者：

Matsumoto, Keiichi ^{[1
]}

Kishikawa, Junya ^{[1
]}

Nishiyama, Tetsuo ^{[1
]}

Onuki, Yuya ^{[1
]}

Shimomura, Kazuhiko ^{[1
]}

机构：

[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, Tokyo 1028554, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 11期

关键词：

CHIP OPTICAL INTERCONNECT; BONDED INP/SI SUBSTRATE; GAINAS/INP MQW; WAVE-GUIDE; LASER; GROWTH; SI; LAYER; CHALLENGES; PHOTONICS;

D O I：

10.7567/JJAP.55.112201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel integration method for III-V semiconductor devices on a Si platform was demonstrated. Thin-film InP was directly bonded on a Si substrate and metal organic vapor phase epitaxy (MOVPE) growth was performed by using an InP/Si template. A void-free 2-in. InP layer bonded on a Si substrate was realized, and a low interfacial resistance and ohmic contact through the bonded interface were observed. After the MOVPE process, the as-grown structure was optically active and we observed photoluminescence (PL) intensity comparable to that from the same structure grown on InP as a reference. Furthermore, almost no lattice strain was observed from the InP layer. Then, the epitaxial growth of a GaInAsP-InP double-hetero (DH) laser diode (LD) was demonstrated on the substrate and we observed lasing emission at RT in a pulse regime. These results are promising for the integration of InP-based devices on a Si platform for optical interconnection. (C) 2016 The Japan Society of Applied Physics

引用

页数：7

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