Investigations of electrical properties in silica/indium tin oxide two-layer film for effective electromagnetic shielding

被引：3

作者：

Kim, SW ^{[1
]}

Lee, JH ^{[1
]}

Kim, J ^{[1
]}

Lee, HW ^{[1
]}

机构：

[1] KIST, Nano Mat Res Ctr, Seoul 136791, South Korea

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2004年 / 87卷 / 12期

关键词：

D O I：

10.1111/j.1151-2916.2004.tb07493.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of zinc ions added to silica film on the electrical and structural properties of a silica/indium tin oxide two-layer film which had been prepared by solution coating for electromagnetic shielding of displays was studied. The volume resistivity of the undoped silica/indium tin oxide film was more than 3 times as high as that of the zinc-doped sitica/indium tin oxide film. The addition of divalent cations, zinc ions, to the overcoated layer led volume resistivity of the two-layer film to decrease significantly and also caused a long-term increase in stability. The decrease in volume resistivity was due to the addition of zinc ions that changed the interface ionization and helped to enhance the electrical conductivity in the two-layer film.

引用

页码：2213 / 2217

页数：5

共 34 条

[1]

AGUADO M, 1997, J COLLOID INTERF SCI, V185, P459

[2] Transparent conducting, anti-static and anti-static-anti-glare coatings on plastic substrates [J].