A 1.05 V 1.6 mW, 0.45 °C 3σ Resolution ΣΔ Based Temperature Sensor With Parasitic Resistance Compensation in 32 nm Digital CMOS Process

被引：55

作者：

Lakdawala, Hasnain ^{[1
]}

Li, Y. William ^{[1
]}

Raychowdhury, Arijit ^{[1
]}

Taylor, Greg ^{[1
]}

Soumyanath, Krishnamurthy ^{[1
]}

机构：

[1] Intel Corp, Hillsboro, OR 97124 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2009年 / 44卷 / 12期

关键词：

ADC; current chopping; Sigma-Delta; temperature sensor; thermal sensor;

D O I：

10.1109/JSSC.2009.2035553

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monitoring temperature in a microprocessor is important for optimal energy consumption under various workloads. This paper presents a temperature sensor in a 32 nm high-k metal gate digital CMOS process for integration in a microprocessor core. The sensor uses a ratio of currents driven into a BJT pair with current chopping to up-convert the temperature signal. A second order sigma-delta (Sigma Delta) 1-bit ADC is used to digitize the chopped signal, which is then down-converted and filtered in the digital domain to obtain a temperature measurement. The sensor operates from -10 to 110 degrees C, achieving a 3 sigma resolution of 0.45 degrees C, and < 5 degrees C inaccuracy without calibration/trimming.

引用

页码：3621 / 3630

页数：10