Wigner transport through tunneling structures scattering interpretation of the potential operator

被引：0

作者：

Nedjalkov, M ^{[1
]}

Kosik, R ^{[1
]}

Kosina, H ^{[1
]}

Selberherr, S ^{[1
]}

机构：

[1] TU Vienna, Inst Microelect, Vienna, Austria

来源：

SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A stochastic method for simulation of quantum transport in nanoscale electronic devices is proposed. The interaction with the Wigner potential is interpreted as a scattering mechanism, which is a counterpart to the scattering mechanisms due to the lattice imperfections. The derived quantum Monte Carlo algorithm retains the basic features of the Single Particle Monte Carlo method used for simulation of classical devices. The method is applied for simulation of tunneling process through energy barriers.

引用

页码：187 / 190

页数：4

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