Effect of Structural Change on Thermoelectric Properties of the Chalcogenide Ge2Sb2Te5 Thin Films

被引：11

作者：

Hong, Ji-Eun ^{[1
]}

Yoon, Soon-Gil ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Mat Sci & Engn, Taejon 305764, South Korea

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2014年 / 3卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

CRYSTALLIZATION;

D O I：

10.1149/2.0031410jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ge2Sb2Te5 (GST) films grown onto SiO2 (250 nm)/Si substrate at room temperature were annealed at various temperatures to investigate the structural variations. The GST films changed from amorphous to face-centered cubic (FCC) and hexagonal closed packed (HCP) crystalline phases as the annealing temperature increases and the samples annealed at 380 degrees C showed co-existence of the FCC and the HCP. Samples annealed at 380 degrees C showed the highest charge carrier concentration, the lowest resistivity, and the highest power factor. (C) The Author(s) 2014. Published by ECS. All rights reserved.

引用

页码：P298 / P301

页数：4

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