Effects of silicon nanowires (SiNWs) contents on the optical and dielectric properties of poly(3-hexylthiophene):SiNWs nanocomposites

In this study, we investigated the dependency of the optical and electrical proprieties of poly(3-hexylthiophene):silicon nanowires (P3HT:SiNWs) nanocomposites on the concentration of SiNWs based on photoluminescence (PL) and impedance spectroscopy. The PL spectra indicated the presence of charge transfer at low concentrations of SiNWs. The effects of the SiNWs contents on the loss mechanism were determined based on permittivity measurements, which were related to the distribution of the SiNWs contents on the polymer backbones, as well as being correlated with the PL and conductance results. The imaginary part of the impedance exhibited a high relaxation frequency attributable to Maxwell-Wagner polarization, where the extracted relaxation time was in the range of milliseconds. The Cole Cole diagram had an excellent fit via the equivalent circuit, which incorporated the chemical capacitance C-mu, contact electrical resistance R-s, and recombination resistance R-p.