Thickness dependence of AC conductivity in TlSe thin films

被引：1

作者：

Saglam, Ugur ^{[1
]}

Yakut, Sahin ^{[1
]}

Karabak, Binnur ^{[1
]}

Bozoglu, Deniz ^{[1
]}

机构：

[1] Istanbul Univ, Sci Fac, Phys Dept, TR-34459 Istanbul, Turkey

来源：

CANADIAN JOURNAL OF PHYSICS | 2019年 / 97卷 / 11期

关键词：

alternative conductivity; thickness dependence; thin films; thalium selenide; AC conductivity; BAND-STRUCTURE; DIELECTRIC FUNCTION; SPECTROSCOPY; SPECTRA;

D O I：

10.1139/cjp-2018-0758

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thalium selenide (TlSe), which has a lattice with tetragonal symmetry, is a member of the A(3)B(6) semiconductor group. The structure of TlSe is defined as chains where atoms inside are bonded with an ionic-covalent bond. TlSe thin films were deposited by thermal evaporation under a high vacuum on glass substrates. The structure of TlSe thin films is amorphous with a tetragonal structure. The AC conductivity measurements were operated via the measurements of capacitance and dielectric dissipation (tan delta) at room temperature. AC conductivity values change between 10(-11) and 10(-6) S/cm at the low-frequency side with decreasing thickness. Two different conduction regions were observed with increasing frequency. The region observed at the low-frequency side can be attributed to the motion of a chain-like part of the lattice, while the region observed at the high-frequency side can be attributed to side groups.

引用

页码：1182 / 1184

页数：3

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