Effects of Gate-Induced Electric Fields on Semiconductor Majorana Nanowires

被引：146

作者：

Antipov, Andrey E. ^{[1
]}

Bargerbos, Arno ^{[2
,3
]}

Winkler, Georg W. ^{[1
]}

Bauer, Bela ^{[1
]}

Rossi, Enrico ^{[1
,4
]}

Lutchyn, Roman M. ^{[1
]}

机构：

[1] Microsoft Res, Stn Q, Santa Barbara, CA 93106 USA

[2] Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands

[3] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands

[4] William & Mary, Dept Phys, Williamsburg, VA 23187 USA

来源：

PHYSICAL REVIEW X | 2018年 / 8卷 / 03期

关键词：

TOPOLOGICAL QUANTUM COMPUTATION; SUPERCONDUCTOR NANOWIRES; ZERO MODES; FERMIONS; DEVICES; CONDUCTANCE; PARTICLES; SIGNATURE; EQUATIONS; EPITAXY;

D O I：

10.1103/PhysRevX.8.031041

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the effect of gate-induced electric fields on the properties of semiconductor-superconductor hybrid nanowires which represent a promising platform for realizing topological superconductivity and Majorana zero modes. Using a self-consistent Schrodinger-Poisson approach that describes the semiconductor and the superconductor on equal footing, we are able to access the strong tunneling regime and identify the impact of an applied gate voltage on the coupling between semiconductor and superconductor. We discuss how physical parameters such as the induced superconducting gap and Lande g factor in the semiconductor are modified by redistributing the density of states across the interface upon application of an external gate voltage. Finally, we map out the topological phase diagram as a function of magnetic field and gate voltage for InAs/Al nanowires.

引用

页数：18

共 124 条

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