Dependence of band structures on stacking and field in layered graphene

被引：311

作者：

Aoki, Masato ^{[1
]}

Amawashi, Hiroshi ^{[1
]}

机构：

[1] Gifu Univ, Fac Engn, Gifu 5011193, Japan

来源：

SOLID STATE COMMUNICATIONS | 2007年 / 142卷 / 03期

关键词：

thin films; crystal structure and symmetry; electronic band structure; dielectric response; BILAYER GRAPHENE; BERRYS PHASE; GRAPHITE; BINDING; CARBON;

D O I：

10.1016/j.ssc.2007.02.013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Novel systems of layered graphene are attracting interest for theories and applications. The stability, band structures of few-layer graphite films, and their dependence on electric field applied along the c-axis are examined within the density functional theory. We predict that those of Bernal type and also rhombohedral type tri- and tetra-layer graphite films exhibit stability. Rhombohedral-type systems, including AB-bilayer, show variable band gap induced by perpendicular electric fields, whereas the other systems, such as the Bernal-type films, stay semi-metallic. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：123 / 127

页数：5

共 18 条

[1]

*CPMD, VERS 3 9 2 COP IBM C

[2] Van der Waals binding energies in graphitic structures [J].