Direct emissive pattern formation in PPV type polymer with built-in photoresist properties and the application to light emitting devices

被引:12
作者
Krebs, FC [1 ]
Spanggaard, H [1 ]
机构
[1] Riso Natl Lab, Danish Polymer Ctr, DK-4000 Roskilde, Denmark
关键词
PPV-type polymer; light emitting device; photobleaching;
D O I
10.1016/j.synthmet.2004.06.025
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The principle of photobleaching in the conjugated polymer material didodecylstilbenevinylene (didodecyl-PSV) was used as a built-in photoresist property to control the extent of the emissive layer in polymer light emitting devices (PLEDs). Illumination of thin films of the conjugated polymer material on optically transparent conducting substrates through a positive mask with short exposure times (20-60 s) using a 150 W Xenon lamp and subsequent application of the and the second electrode enabled the formation of an electroluminescent image of the mask. We demonstrate a direct method where no photoresist, intermediate steps or mechanical manipulation is required to generate a complex emissive pattern employing a homogenous film and homogenous electrodes. The fluorescence of the film showed complex lifetime decays. We found that the lifetime increased with emission wavelength indicating the presence of energetically disordered excitons. The fine structure observed in the solution emission is absent in the film emission. However, after photobleaching the film emission becomes very similar to the solution emission. The appearance of fine structure could indicate that only one state became responsible for the photoluminescence spectrum. Infrared spectroscopy was used to confirm the presence of a degradation route similar to that reported for dialkoxypolyphenylenevinylene materials where the vinylene bonds are react with molecular oxygen and form carboxylic acid groups. Finally the effect of using different electrode metals was established and a comparison made between the photoluminescence and electroluminescence properties. The electroluminescence emission maximum (580 nm) of didodecyl-PSV light emitting devices was found to be redshifted by 20 nm compared to the photoluminescence, exhibited turn-on voltages below 3 V and reached a luminance of 100 cd m(-2) at current densities below 10 mA cm(-2). (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:53 / 59
页数:7
相关论文
共 33 条
  • [1] LIGHT-EMITTING-DIODES BASED ON CONJUGATED POLYMERS
    BURROUGHES, JH
    BRADLEY, DDC
    BROWN, AR
    MARKS, RN
    MACKAY, K
    FRIEND, RH
    BURN, PL
    HOLMES, AB
    [J]. NATURE, 1990, 347 (6293) : 539 - 541
  • [2] PHOTOINITIATED THERMOLYSIS OF POLY(PHENYLENEVINYLENE) PRECURSOR AND PHOTOCHEMICAL DOPING OF POLY(PHENYLENEVINYLENE)
    CHO, I
    KIM, JB
    LEE, SH
    [J]. MACROMOLECULAR RAPID COMMUNICATIONS, 1995, 16 (11) : 851 - 854
  • [3] Photochemical generation of conducting patterns in polybutadiene films
    Dai, LM
    Griesser, HJ
    Hong, XY
    Mau, AWH
    Spurling, TH
    Yang, YY
    White, JW
    [J]. MACROMOLECULES, 1996, 29 (01) : 282 - 287
  • [4] Singlet oxygen as a reactive intermediate in the photodegradation of phenylenevinylene oligomers
    Dam, N
    Scurlock, RD
    Wang, BJ
    Ma, LC
    Sundahl, M
    Ogilby, PR
    [J]. CHEMISTRY OF MATERIALS, 1999, 11 (05) : 1302 - 1305
  • [5] AN IMPROVED SYNTHESIS OF POLYACETYLENE
    FEAST, WJ
    WINTER, JN
    [J]. JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, 1985, (04) : 202 - 203
  • [6] Electroluminescence in conjugated polymers
    Friend, RH
    Gymer, RW
    Holmes, AB
    Burroughes, JH
    Marks, RN
    Taliani, C
    Bradley, DDC
    Dos Santos, DA
    Brédas, JL
    Lögdlund, M
    Salaneck, WR
    [J]. NATURE, 1999, 397 (6715) : 121 - 128
  • [7] POLYMERIZATION OF ALPHA-HALOGENATED P-XYLENES WITH BASE
    GILCH, HG
    WHEELWRIGHT, WL
    [J]. JOURNAL OF POLYMER SCIENCE PART A-1-POLYMER CHEMISTRY, 1966, 4 (6PA1): : 1337 - +
  • [8] Holdcroft S, 2001, ADV MATER, V13, P1753, DOI 10.1002/1521-4095(200112)13:23<1753::AID-ADMA1753>3.0.CO
  • [9] 2-2
  • [10] Fabrication of organic light-emitting devices by low-pressure cold welding
    Kim, C
    Forrest, SR
    [J]. ADVANCED MATERIALS, 2003, 15 (06) : 541 - 545