Influence of layer doping and thickness on predicted performance of NPNAlGaN/GaN HBTs

被引：4
作者：
Lee, KP
Dabiran, A
Chow, PP
Pearton, SJ
Ren, F
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] SVT Associates, Eden Prairie, MN 55344 USA
[4] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 06期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/S0038-1101(02)00462-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of base doping and thickness on dc current gain, collector emitter saturation voltage, saturation current and collector-emitter breakdown voltage of GaN/AlGaN heterojunction bipolar transistors were investigated using a drift-diffusion transport model. Given the low ionization efficiency of Mg acceptors in the base, it is important to design structures that avoid depletion of the base layer. The presence of a resistive base causes current to flow directly to the collector, severely reducing gain. The effect of emitter doping on current gain and of collector doping on the breakdown voltage of the C-E junction were also investigated. (C) 2003 Elsevier Science Ltd. All rights reserved.
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收藏
页码：969 / 974
页数：6
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