Structural and optical properties in the V-doped II-VI diluted magnetic semiconductor Cd1-xVxTe

We report on the structural and the magnetic properties of ternary Cd1-x V (x) Te semiconductor alloys (0 a parts per thousand currency sign x a parts per thousand currency sign 0.05) grown by using the vertical Bridgman method. This material crystallizes in a zinc-blende structure at vanadium concentrations up to x = 0.05. Optical absorption spectra of Cd1-x V (x) Te were obtained in the range of 1.4-1.6 eV at temperatures between 20 and 300 K. The bandgap energy decreased with both increasing V content and increasing temperature. We have described the temperature dependence of the band gap E (g) (T) on the basis of the electron-phonon interaction, thereby enabling us to obtain several important physical parameters of Cd1-x V (x) Te.