Modified BVD-equivalent circuit of FBAR by taking electrodes into account

被引：20

作者：

Chao, MC ^{[1
]}

Huang, ZN ^{[1
]}

Pao, SY ^{[1
]}

Wang, Z ^{[1
]}

Lam, CS ^{[1
]}

机构：

[1] TXC Corp, Ping Cheng, Tao Yuan, Taiwan

来源：

2002 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2 | 2002年

关键词：

D O I：

10.1109/ULTSYM.2002.1193558

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

A modified BVD-equivalent circuit model is developed when taking the thin electrodes as mass loading. It is shown that the mass of the electrodes can be directly added onto the mass of the piezoelectric film to form a series inductor and a capacitance is added to the capacitance of the film in parallel. The results implied that the traditional BVD model could be applied to the three-layer resonators with thick electrodes. Numerical simulations for three-layer FBAR consisting of AN film with thick electrodes were carried out, and results showed that a simple L-1 - C-1 - R-1 and C-0 model is perfectly applicable for thick electrodes when the two electrodes have similar thickness. If the thickness of the two electrodes is very different, the simple BVD model can't be simply used.

引用

页码：973 / 976

页数：4

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