Current and strain-induced spin polarization in InGaN/GaN superlattices

被引：38

作者：

Chang, H. J. ^{[1
]}

Chen, T. W. ^{[1
]}

Chen, J. W. ^{[1
]}

Hong, W. C. ^{[1
]}

Tsai, W. C. ^{[1
]}

Chen, Y. F. ^{[1
]}

Guo, G. Y. ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.98.136403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The lateral current-induced spin polarization in InGaN/GaN superlattices (SLs) without an applied magnetic field is reported. The fact that the sign of the nonequilibrium spin changes as the current reverses and is opposite for the two edges provides a clear signature for the spin Hall effect. In addition, it is discovered that the spin Hall effect can be strongly manipulated by the internal strains. A theoretical work has also been developed to understand the observed strain-induced spin polarization. Our result paves an alternative way for the generation of spin polarized current.

引用

页数：4

共 25 条

[21] Universal intrinsic spin Hall effect [J].