Significant improvement in the performance of well-aligned ZnO nanowire arrays ultraviolet photodetector by Ga doping

被引：4

作者：

Xu, Nengchang ^{[1
,2
,3
,4
]}

Yuan, Zhaolin ^{[1
,2
,3
,4
]}

Wang, Biyi ^{[2
]}

Nie, Fengjun ^{[5
]}

He, Jianfeng ^{[1
,3
,4
]}

Wang, Xueyuan ^{[1
,3
,4
]}

机构：

[1] East China Univ Technol, Jiangxi Engn Lab Radioact Geosci & Big Data Techno, Nanchang 330013, Jiangxi, Peoples R China

[2] Sci & Technol Electroopt Informat Secur Control La, Tianjin 300308, Peoples R China

[3] East China Univ Technol, Jiangxi Engn Technol Res Ctr Nucl Geosci Data Sci, Nanchang 330013, Jiangxi, Peoples R China

[4] East China Univ Technol, Sch software & Informat Engn, Nanchang 330013, Jiangxi, Peoples R China

[5] East China Univ Technol, State Key Lab Nucl Resources & Environm, Nanchang 330013, Jiangxi, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2022年 / 260卷

基金：

中国国家自然科学基金;

关键词：

Hydrothermal technique; Ga-doped ZnO nanowire arrays; Ultraviolet photodetector; Detectivity; DOPED ZNO; ENHANCEMENT; OXIDE;

D O I：

10.1016/j.mee.2022.111787

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low-cost ultraviolet photodetectors (UV PDs) with high performance have wide applications in many important fields, herein, both well-aligned zinc oxide nanowire arrays (ZNWAs) and gallium (Ga)-doped ZNWAs (GZNWAs, Ga/Zn = 1 atom%) UV PDs were fabricated by a hydrothermal technique, their performances were analyzed in detail. The results showed that the GZNWAs UV PD exhibited an excellent response to 365 nm light, its response time (T-r), decay time (T-d), responsivity (R-lambda), sensitivity (S), detectivity (D*) and external quantum efficiency (EQE) were 9.8 s, 45.8 s, 72.8 A/W at 5 V, 747.8 at 0 V, 5.5 x 10(12) Jones and 2.5 x 10(4)%, respectively. By comparison, the performances of GZNWAs UV PD were much better than those of ZNWAs UV PD, we found that Ga doping played a key role on improving the performances of ZNWAs-based UV PDs

引用

页数：5

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