Evaluation of Zn uniformity in CdZnTe substrates

被引：10

作者：

Hirano, R ^{[1
]}

Hichiwa, A ^{[1
]}

Maeda, H ^{[1
]}

Yamamoto, T ^{[1
]}

机构：

[1] Japan Energy Corp, Compound Semicond Mat Dept, Kitaibaraki, Ibaraki 31915, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 06期

关键词：

CdZnTe; Zn concentration; NIR; diode array spectrometer;

D O I：

10.1007/s11664-000-0200-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The radial uniformity of Zn concentration in 4 in. CdZnTe crystals was improved by keeping uniform temperature distribution in the VGF furnace. The maximum temperature difference at the outside of crucible in radial direction was reduced to less than 1. The size of voids observed outside of the crystals became small and the distribution has become well-uniformed. To evaluate the Zn uniformity, a new NIR (Near Infrared) instrument was developed using the diode array type spectrometer. The NIR spectra were analyzed by C.D. Maxey et al.'s(1) method. The Zn concentration in 4 in. CdZnTe substrates grown by modified furnace was more uniform than that of the conventional substrates.

引用

页码：654 / 656

页数：3

共 3 条

[1] MACROSEGREGATION AND MICROSEGREGATION OF ZN IN BRIDGMAN-GROWN CDZNTE [J].

CAPPER, P ;

HARRIS, JE ;

OKEEFFE, ES ;

JONES, CL ;

GALE, I .

ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS, 1995, 5 (02) :101-108

[2] OPTICAL TECHNIQUES FOR COMPOSITION MEASUREMENT OF BULK AND THIN-FILM CD1-YZNYTE [J].

JOHNSON, SM ;

SEN, S ;

KONKEL, WH ;

KALISHER, MH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03) :1897-1901

[3] Zn concentration determination in CdZnTe by NIR spectroscopy [J].

Maxey, CD ;

Gower, JE ;

Capper, P ;

O'Keefe, ES ;

Skauli, T ;

Ard, CK .

JOURNAL OF CRYSTAL GROWTH, 1999, 197 (03) :427-434

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