Negative Differential Resistance of Graphene Oxide/Sulphur Compound

被引：6

作者：

Figarova, S. R. ^{[1
]}

Aliyev, E. M. ^{[2
]}

Abaszade, R. G. ^{[3
]}

Alekberov, R., I ^{[3
]}

Figarov, V. R. ^{[3
]}

机构：

[1] Baku State Univ, 23 Z Khalilov St, AZ-1148 Baku, Azerbaijan

[2] Helmholtz Zentrum Geesthacht, Inst Polymer Res, Max Planck Str 1, D-21502 Geesthacht, Germany

[3] Inst Phys, 131 H Javid Ave, AZ-1143 Baku, Azerbaijan

来源：

JOURNAL OF NANO RESEARCH | 2021年 / 67卷

关键词：

graphene oxide; sulphur; Hummers' method; negative differential resistance; hopping tunneling; ELECTRICAL-CONDUCTIVITY; OXIDE; CARBON; ENERGY;

D O I：

10.4028/www.scientific.net/JNanoR.67.25

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Graphene oxide/sulphur compound was synthesized by Hammers method. The chemical composition, presence/quantity of functional groups, exfoliation level, number of layers, crystallite size of graphene oxide/sulphur were characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy images. The current-voltage characteristics of the samples were measured in air at room temperature. In the I - V characteristic curve of graphene oxide/sulphur compound with the ratio of oxygen to carbon of 3.54 and that to sulphur of 42.54, negative differential resistance was observed. The negative differential resistance is attributed to current carrier transitions between the localized states formed by functional groups.

引用

页码：25 / 31

页数：7

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