Transformation of CeO2(111) to Ce2O3(0001) films

被引：151

作者：

Xiao, WD ^{[1
]}

Guo, QL ^{[1
]}

Wang, EG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2003年 / 368卷 / 5-6期

基金：

中国国家自然科学基金;

关键词：

TEMPERATURE EPITAXIAL-GROWTH; PULSED-LASER DEPOSITION; CERIUM OXIDE-FILMS; THIN-FILMS; ELECTRONIC-STRUCTURE; SINGLE-CRYSTAL; CEO2; FILMS; SURFACES; SI(111); SILICON;

D O I：

10.1016/S0009-2614(02)01889-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An ordered CeO2(1 1 1) film has been grown on Re(0 0 0 1) substrate and studied by X-ray photoelectron spectroscopy and low-energy-electron diffraction. The results indicate that Ce4+ cations are reduced to Ce3+ by heating the cerium dioxide films in ultrahigh vacuum at 1000 K, and the Ce3+ cations can be re-oxidized to Ce4+ at 700 K in oxygen ambience. That reduction and re-oxidation caused by oxygen release and storage results in a formation of oxygen vacancies on the ceria surface and the CeO2 (1 1 1)-Ce2O3(0 0 0 1) transition. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：527 / 531

页数：5

共 25 条

[1] THE GROWTH, STRUCTURE AND STABILITY OF CERIA OVERLAYERS ON PD(111) [J].

ALEXANDROU, M ;

NIX, RM .

SURFACE SCIENCE, 1994, 321 (1-2) :47-57

[2] VALENCE FLUCTUATIONS IN NARROW-BAND OXIDES [J].

ALLEN, JW .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1985, 47-8 (FEB) :168-174

[3] Room-temperature epitaxial growth of CeO2(001) thin films on Si(001) substrates by electron beam evaporation [J].

Ami, T ;

Ishida, Y ;

Nagasawa, N ;

Machida, A ;

Suzuki, M .

APPLIED PHYSICS LETTERS, 2001, 78 (10) :1361-1363

[4] REACTION AND REGROWTH CONTROL OF CEO2 ON SI(111) SURFACE FOR THE SILICON-ON-INSULATOR STRUCTURE [J].

CHIKYOW, T ;

BEDAIR, SM ;

TYE, L ;

ELMASRY, NA .

APPLIED PHYSICS LETTERS, 1994, 65 (08) :1030-1032

[5] Violet/blue light-emitting cerium silicates [J].

Choi, WC ;

Lee, HN ;

Kim, EK ;

Kim, Y ;

Park, CY ;

Kim, HS ;

Lee, JY .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2389-2391

[6]

CRUCQ A, 1991, CATALYSIS AUTOMOTIVE, V2

[7] PULSED-LASER DEPOSITION OF THICK YBA2CU3O7-DELTA FILMS WITH JC-GREATER-THAN-1 MA/CM2 [J].

FOLTYN, SR ;

TIWARI, P ;

DYE, RC ;

LE, MQ ;

WU, XD .

APPLIED PHYSICS LETTERS, 1993, 63 (13) :1848-1850

[8] In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy [J].

Furusawa, M ;

Tashiro, J ;

Sasaki, A ;

Nakajima, K ;

Takakura, M ;

Chikyow, T ;

Ahmet, P ;

Yoshimoto, M .

APPLIED PHYSICS LETTERS, 2001, 78 (13) :1838-1840

[9] STRUCTURE, COMPOSITION AND THERMAL-PROPERTIES OF CERIUM OXIDE-FILMS ON PLATINUM(111) [J].

HARDACRE, C ;

ROE, GM ;

LAMBERT, RM .

SURFACE SCIENCE, 1995, 326 (1-2) :1-10

[10] EPITAXIAL-GROWTH OF CEO2 LAYERS ON SILICON [J].

INOUE, T ;

YAMAMOTO, Y ;

KOYAMA, S ;

SUZUKI, S ;

UEDA, Y .

APPLIED PHYSICS LETTERS, 1990, 56 (14) :1332-1333

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