Wideband Frequency Quadrupler for D-Band Applications in BiCMOS Technology

被引:0
作者
Ali, Abdul [1 ]
Yun, Jongwon [2 ]
Ng, Herman Jalli [3 ]
Kissinger, Dietmar [4 ]
Giannini, Franco [1 ]
Colantonio, Paolo [1 ]
机构
[1] Univ Roma Tor Vergata, Dept Elect Engn, Rome, Italy
[2] Samsung Elect, Device Solut Div, Gyeonggi, South Korea
[3] IHP GmbH, Dept Circuit & Design, Frankfurt, Oder, Germany
[4] Ulm Univ, Inst Electron Devices & Circuits, Ulm, Germany
来源
2020 23RD INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON 2020) | 2020年
基金
欧盟地平线“2020”;
关键词
Broadband; D-band; Frequency Quadrupler; Gilbert Cell; Mixer; SiGe BiCMOS; sub-THz;
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper presents the design of a D-band frequency quadrupler (FQ) based on two cascaded frequency doublers. Each doubler relies on the bootstrapped Gilbert cell (GC) mixers. The FQ is developed with a standard 130-nm SiGe BiCMOS process. It consists of fully integrated input and output baluns, frequency doublers, and matching networks. The design of the FQ was optimized via single-ended matching networks to reduce the chip area and increase bandwidth. The results based on the EM-simulation of FQ with the assistance of the hicum model for the transistor, demonstrate a peak conversion gain and output power of 25 dB and 5 dBm, respectively at 130 GHz. The FQ shows a 3-dB bandwidth higher than 84 GHz with an nth harmonic rejection of at least 16 dBc. The FQ can be exploited in various systems design for different D-band applications. The future work includes measurement of the FQ.
引用
收藏
页码:229 / 231
页数:3
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