The influence of the photoacid-generator structure on chemical amplification in a resist

被引：3
作者：
Bulgakova, S. A.
Dzhons, M. M.
Mazanova, L. M.
Lopatin, A. Ya.
机构：
[1] Nizhnii Novgorod State Univ, Inst Chem Res, Nizhnii Novgorod 603950, Russia
[2] Nizhnii Novgorod State Univ, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
POLYMER SCIENCE SERIES A | 2006年 / 48卷 / 03期
关键词：
8;
D O I：
10.1134/S0965545X06030072
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
The effect of structure of a photoacid generator ( triarylsulfonium and diaryliodonium salts) on the trends of image formation in a chemically amplified resist based on a methyl methacrylate copolymer with methacrylic acid and ethoxyethyl methacrylate was studied. It was shown that the type and quality of image in the resist depend on the structure of the Bronsted acid produced upon UV irradiation, on postexposure bake temperature, and on exposure radiation energy.
引用
收藏
页码：266 / 271
页数：6
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