Effects of Mechanical Damage and Temperature on the Electrical Performance of CIGS Thin-Film Solar Cells

被引：4
作者：
Kim, Hansung [1 ]
Wojkovich, Benjamin G. [1 ]
机构：
[1] Purdue Univ Northwest, Hammond, IN 46323 USA
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2018年 / 8卷 / 05期
关键词：
Copper indium gallium diselenide (CIGS); electrical performance; mechanical damage; temperature; thin-film solar cells; RESONANCE ULTRASONIC VIBRATIONS; CRACK DETECTION; SILICON-WAFERS;
D O I：
10.1109/JPHOTOV.2018.2858557
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper, we investigate the effect of mechanical damage and temperature on copper indium gallium diselenide (CIGS) thin-film solar cells through experiments and modeling. After generating mechanical damage on CIGS solar cell with 20% increments, the electrical performance was measured (current-voltage curve) while temperature was varying from 10 to 70 degrees C at 20 degrees increments. Other measured values are open-circuit voltage (V-oc), fill factor (ff), maximum power (P-max). Those electrical values (V-oc, ff, P-max) are found as a function of temperature and percent damage. Moreover, the parameters of the single diode solar cellmodel were obtained as a function of temperature and percentage damage: light generation current (I-L), saturation current (I-0), shunt resistance (R-sh), and series resistance (R-s). Our paper contributes to the deeper understanding of the concurrent effect of temperature and mechanical damage to solar cells.
引用
收藏
页码：1331 / 1336
页数：6
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