Measured negative differential resistivity for GaN Gunn diodes on GaN substrate

被引：37

作者：

Yilmazoglu, O. ^{[1
]}

Mutamba, K. ^{[1
]}

Pavlidis, D. ^{[1
]}

Karaduman, T. ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Dept High Frequency Elect, D-64283 Darmstadt, Germany

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 08期

关键词：

D O I：

10.1049/el:20070658

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current-voltage characteristics obtained by pulse-biasing GaN Gunn diodes on GaN substrate showed a wide negative differential resistance (NDR) region. Electrical fields of up to twice the threshold value did not lead to any electromigration effects from the contacts. The electron drift-velocity (VD) was estimated to be 1.9 x 10(7) cm/s. This represents the first demonstration of a stable NDR with a vertical GaN-based Gunn device.

引用

页码：480 / 482

页数：3

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