Fabrication of high precision X-ray mask for X-ray grating of X-ray Talbot interferometer

被引:8
|
作者
Noda, Daiji [1 ]
Tsujii, Hiroshi [1 ]
Takahashi, Naoki [1 ]
Hattori, Tadashi [1 ]
机构
[1] Univ Hyogo, Lab Adv Sci & Technol Ind, Kamigori, Hyogo 6781205, Japan
关键词
LARGE-AREA;
D O I
10.1007/s00542-010-1085-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
X-ray imaging is used in many applications such as medical diagnosis and non-destructive inspection, and has become an essential technologies in these areas. In one image technique, X-ray phase information is obtained using X-ray Talbot interferometer, for which X-ray diffraction gratings are required; however, the manufacture of fine, highly accurate, and high aspect ratio gratings is very difficult. X-ray lithography could be used to fabricate structures with high precision since it uses highly directive syncrotron radiation. Therefore, we decided to fabricate X-ray gratings using X-ray lithography technique. The accuracy of the fabricated structure depends largely on the accuracy of the X-ray mask used. In our research, we combined deep silicon dry etching technology with ultraviolet lithography in order to fabricate untapered and high precision X-ray masks containing rectangular patterns. We succeeded in fabricating an X-ray mask with a pitch of 5.3 mu m. The thickness of the Au absorber was about 5 mu m, and the effective area was 60 x 60 mm(2), which is a sufficient size for phase tomography imaging. We demonstrated the utility of the Si dry etching process for making high precision X-ray masks.
引用
收藏
页码:1309 / 1313
页数:5
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