Hydrogen plasma etching of silicon dioxide in a hollow cathode system

被引：22

作者：

Pena, O. ^{[1
]}

Muhl, S. ^{[1
]}

Lopez, W. ^{[1
]}

Rodriguez-Fernandez, L. ^{[2
]}

Ruvalcaba-Sil, J. L. ^{[2
]}

机构：

[1] Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico

[2] Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 12期

关键词：

Chemical plasma etching; Silicon dioxide; Hollow cathode; CHEMICAL-VAPOR-DEPOSITION; ATOMIC-HYDROGEN; DIAMOND FILMS; AMORPHOUS-SILICON; GRAPHITE; GROWTH; SIO2; TEMPERATURE; NUCLEATION; BEAM;

D O I：

10.1016/j.tsf.2009.08.042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical etching of various materials has been observed when hydrogen plasmas are used in material processing. In the case of the deposition of diamond films the preferential etching of sp(2) bonded carbon is considered to be of fundamental importance. A few papers have been published which have indicated that etching by hydrogen ions is different to that by hydrogen atoms. In this paper we describe the etching of silicon dioxide by hydrogen which was plasma-activated in a molybdenum-lined RF hollow cathode. The etch rate was seen to be thermally activated but decreased with increasing plasma power. The addition of a few percentage of helium increased the etch rate. The application of a 50 V bias to the sample holder almost doubled the etch rate indicating the importance of ion bombardment for the chemical reaction. At high plasma powers and substrate temperatures in excess of 450 degrees C a thin molybdenum deposit was formed on the quartz samples. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3156 / 3159

页数：4

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