Cyclophosphazene-containing polymers as imprint lithography resists

We present the evaluation of a cyclophosphazene-containing polymer as a patternable resist for imprint lithography. Hexamethacryloxybutoxycyclotriphosphazene layers containing small amounts of photoinitiator can be applied to silicon wafers substrates by spin coating techniques and cured photochemically to give tough, network polymer thin films. The films were characterized by FT-IR. Thin films approximately 200 nm in thickness were subjected to anisotropic O-2 and CF4 plasmas and the etch rates were determined. The polymer films etch at a rate of 21 angstrom a/s in CF4 plasma, and as low as 1.6 angstrom a/s in O-2 plasma, which is comparable or lower than the rates observed with commercially available silicon-containing photoresists. The surface chemical composition was surveyed by X-ray photoelectron spectroscopy, which gave results consistent with the formation of an etch resistant phosphorus-rich layer during reaction with O-2 plasma. The polymer was processed by nano-contact molding imprint lithography and replicated 200 nm period test patterns. This report is the first demonstration of a cyclophosphazene-containing polymer as a resist candidate for high-resolution lithography.