Terahertz detection in a double-grating-gate heterotransistor

被引：2

作者：

Coquillat, D. ^{[2
]}

Nadar, S. ^{[2
]}

Teppe, F. ^{[2
]}

Dyakonova, N. ^{[2
]}

Boubanga-Tombet, S. ^{[2
]}

Knap, W. ^{[2
]}

Nishimura, T. ^{[3
]}

Meziani, Y. M. ^{[3
]}

Otsuji, T. ^{[3
]}

Popov, V. V. ^{[1
,3
]}

Tsymbalov, G. M. ^{[3
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

[2] Univ Montpellier 2, GES UMR5650, F-34095 Montpellier, France

[3] TRT, CEA LETI, Bell Lab, Marcoussis, France

来源：

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16) | 2009年 / 193卷

基金：

俄罗斯基础研究基金会;

关键词：

RADIATION;

D O I：

10.1088/1742-6596/193/1/012074

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We observed a photovoltaic non-resonant terahertz photoresponse in a InGaAs/GaAs heterostructure with a large area double-grating-gate at room temperature. Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields exited in the structure by incoming terahertz radiation allowed us to interpret this detection as coming from the depleted regions of the channel.

引用

页数：4

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