Sintering behavior, structure, and microwave properties of novel Li2xCu1-xMoO4 ceramics

被引：14

作者：

Lyu, Xinyuan ^{[1
]}

Li, Zhengxin ^{[1
]}

Jin, Jingjing ^{[1
]}

Xue, Yuze ^{[1
]}

Yu, Chaogang ^{[1
]}

Ren, Luchao ^{[1
]}

Zhang, Mingwei ^{[1
]}

Zhou, Hongqing ^{[2
]}

机构：

[1] Shandong Univ Technol, Sch Mat Sci & Engn, Zibo 255000, Shandong, Peoples R China

[2] Nanjing Tech Univ, Coll Mat Sci & Engn, Nanjing 211816, Jiangsu, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2022年 / 48卷 / 12期

关键词：

Li(2)xCu(1-x)MoO(4) ceramics; Sintering behavior; Dielectric properties; X-ray photoelectron spectroscopy (XPS); Raman spectroscopy; Ultra-low temperature co-fired ceramic (ULTCC); DIELECTRIC-PROPERTIES; LOW-TEMPERATURE; CRYSTAL-STRUCTURE; LTCC APPLICATIONS; RAMAN; CU2O; FABRICATION; CUO; YB;

D O I：

10.1016/j.ceramint.2022.02.280

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, we prepared a novel series of Li2xCu1-xMoO4 (x = 0.02, 0.04, 0.06, 0.08, and 0.10) microwave ceramics. The dynamic sintering behavior, crystal phases, micro-morphologies, and dielectric properties of the samples were studied. The substitution of Li+ contributed to refining the crystal grain size, promoting the densification of microstructure, and enhancing the quality factor. Due to different valence substitutions, Cu+ ions were created, which were verified by X-ray photoelectron spectroscopy (XPS) and Raman experiments. In addition, the Raman shift, full width at half maximum (FWHM) value of the A1g peak, and crystal microstrains were analyzed to gain a mechanistic understanding of the influence of structure on the dielectric properties. When x = 0.08, the Li2xCu1-xMoO4 ceramic sintered at 675 C exhibited optimal comprehensive properties with epsilon(r )= 8.17, Qf = 68 476 GHz, and tau(f) = -25 ppm/ C, and good chemical stability between the ceramic and Al electrode was also achieved. These promising properties make Li2xCu1-xMoO4 (x = 0.08) more suitable for ultra low temperature co-fired ceramic (ULTCC) applications.

引用

页码：17225 / 17233

页数：9

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