Low-lying electronic states of GeSe: Multireference singles and doubles configuration interaction study

被引:9
|
作者
Manna, B [1 ]
Das, KK [1 ]
机构
[1] Jadavpur Univ, Dept Chem, Chem Phys Sect, Calcutta 700032, W Bengal, India
来源
JOURNAL OF PHYSICAL CHEMISTRY A | 1998年 / 102卷 / 01期
关键词
D O I
10.1021/jp9719772
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Several low-lying electronic states of GeSe up to the energy of 36 000 cm(-1) have been studied by using the ab initio-based multireference singles and doubles configuration interaction calculations which include relativistic effective core potentials. Potential energy curves of 18 Lambda-S states which dissociate into the ground-state limit Ge(P-3(g))+Se(P-3(g)) have been computed. Effects of spin-orbit coupling on these states are also studied. We have also computed potential energy curves of bound Omega-states arising from those 18 Lambda-S states within the energy limit of 31 000 cm(-1). Spectroscopic constants (r(e), T-e, omega(e), and beta(e)) at equilibrium of all bound states are estimated. The ground state of GeSe is XO+ ((1) Sigma(+)) originating mainly from sigma(2) sigma(2) sigma(2) pi(4) and sigma(2) sigma(2) sigma(2) pi(3) pi configurations with r(e) = 2.172 Angstrom, omega(e) = 382 cm(-1), and beta(e) = 0.093 cm(-1). The agreements with the available experimental values are fairly good. The spin-orbit interactions have little effects on the composition of the low-lying states. The transition energy of the observed A(1)((1) Pi) <-- XO+ ((1) Sigma(+)) transition agrees well with the calculated value. The Lifetimes of the excited A(1) Pi and 2(1) Sigma(+) states are estimated to be 0.42 and 0.45 mu s, respectively.
引用
收藏
页码:214 / 218
页数:5
相关论文
共 50 条
  • [1] Multireference singles and doubles configuration interaction study on the electronic states of GaP
    Manna, B
    Das, KK
    JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 1999, 467 (02): : 135 - 146
  • [2] Multireference singles and doubles configuration interaction study of the electronic states of GaSb
    Dutta, A
    Chattopadhyay, A
    Das, KK
    JOURNAL OF PHYSICAL CHEMISTRY A, 2000, 104 (43): : 9777 - 9784
  • [3] Multireference configuration interaction study of the low-lying electronic states of SiS+
    Chattopadhyaya, S
    Das, KK
    JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 2004, 37 (16) : 3355 - 3367
  • [4] Low-lying electronic states in thallium hydride with multireference configuration interaction calculation
    Liu, Yong
    Liu, Rui
    Li, Lulu
    Yan, Bing
    JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER, 2021, 270
  • [5] Multireference configuration interaction study of the 21 low-lying states of the OF radical
    Liu, Hui
    Shi, Dheng
    Sun, Jinfeng
    Zhu, Zunlue
    JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER, 2017, 198 : 130 - 140
  • [6] Multireference configuration interaction study on spectroscopic properties of low-lying electronic states of As2 molecule
    Wang Jie-Min
    Liu Qiang
    CHINESE PHYSICS B, 2013, 22 (09)
  • [7] Multireference configuration interaction beyond singles and doubles
    Hoffmann, Mark
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2019, 258
  • [8] Multireference configuration interaction study on spectroscopic properties of low-lying electronic states of As2 molecule
    王杰敏
    刘强
    Chinese Physics B, 2013, (09) : 362 - 369
  • [9] Configuration interaction study of the low-lying electronic states of GaBi
    Chattopadhyay, A
    Chattopadhyaya, S
    Das, KK
    JOURNAL OF PHYSICAL CHEMISTRY A, 2002, 106 (11): : 2685 - 2694
  • [10] Low-lying electronic states of InBi: a configuration interaction study
    Chattopadhyay, A
    Chattopadhyaya, S
    Das, KK
    JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 2003, 625 : 95 - 109