Magnetic field effect on the binding energy of a hydrogenic impurity in cylindrical quantum dot

被引:42
作者
Charrour, R
Bouhassoune, M
Fliyou, M [1 ]
Nougaoui, A
机构
[1] Univ Mohammed 1, Fac Sci, Lab Dynam & Opt Mat, Oujda, Morocco
[2] ENS Dept Phys, Fes, Morocco
关键词
semiconductors; quantum dots; impurity level; binding energy; magnetic field;
D O I
10.1016/S0921-4526(00)00495-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A systematic study of the ground state binding energy of a hydrogenic impurity in cylindrical quantum dot subjected to an external strong magnetic field is presented. Calculations are performed within the effective-mass approximation using the variational procedure and considering an infinite confining potential on all surfaces of the system. The binding energy is calculated as a function of the dot size (radius and height), applied magnetic field and donor impurity position. We found that the impurity binding energy depends strongly on the impurity position and magnetic field strength of the dot. Our results are in good agreement with those obtained from low-dimensional systems. The presented results can be useful to control the spatial distribution of the donor center in the microstructure. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:137 / 143
页数:7
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