Growth and characterization of III-V compounds and alloys

被引：0

作者：

Pal, R ^{[1
]}

Agarwal, SK ^{[1
]}

Bose, DN ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi, India

来源：

PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, work is reported on the growth of GaInAs/InP by chloride vapour phase epitaxy (VPE) by varying the Ga:ln source alloy composition to obtain lattice-matched epilayers. The epilayers of Ga1-xInxAs (x < 0.35)/GaAs and GaAs/Ge were grown by metal organic vapour phase epitaxy (MOVPE). Surface morphology, lattice mismatch, electrical and optical characterization was carried out to evaluate the quality of the layers.

引用

页码：268 / 271

页数：4

共 3 条

[1]

Pal R., 1997, Journal of Optics, V26, P99

[2] Double crystal X-ray diffraction studies on chloride-VPE grown GaXIn1-XAs layers with different Ga-to-In ratio [J].