Optical and electrical properties of a-Si1-xCx:H and μc-Si1-xCx:H films prepared by using methane and xylene source

被引：0

作者：

Ma, TF ^{[1
]}

Xu, J ^{[1
]}

Wang, L ^{[1
]}

Huang, XF ^{[1
]}

Du, JF ^{[1
]}

Li, W ^{[1
]}

Chen, KJ ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 1998年 / 3175卷

关键词：

a-Si1-xCx : H; photoluminescence; xylene source; Laser-irradiation;

D O I：

10.1117/12.300726

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were fabricated in the plasma-enhanced chemical vapor deposition system by using silane (SiH4) and two kinds of carbon sources, methane (CH4) and xylene (C8H10), respectively. The optical band gap of methane-made a-Si1-xCx:H was varied from 1.9eV to 2.6eV while that of xylene-made a-Si1-xCx:H could be extended to 3.5eV. Fourier Transform Infrared spectra demonstrated the existence of aromatic ring in xylene-made a-Si1-xCx:H, which is much different from the carbon configuration of methane-made a-Si1-xCx:H. Visible light emission at room temperature was observed from xylene-made a-Si1-xCx:H films. The photoluminescence peak shifted from 630nm (1.97eV) to 450nm (2.75eV) when the optical band gap of samples increased from 2.3eV to 3.5eV. KrF pulse laser with wavelength of 248nm was used to crystallize these two kinds of films at room temperature. For both samples, the conductivities Can reach 10(-5)S/cm and are enhanced by over four orders of magnitude.

引用

页码：446 / 450

页数：5