A Ka-band Doherty Power Amplifier using an innovative Stacked-FET Cell

被引：0

作者：

Costanzo, Ferdinando ^{[1
]}

Giofre, Rocco ^{[1
]}

Camarchin, Vittorio ^{[2
]}

Colantonio, Paolo ^{[1
]}

Limiti, Ernesto ^{[1
]}

机构：

[1] Univ Roma Tor Vergata, Dept Elect Engn, Via Politecn 1, I-00133 Rome, Italy

[2] Politecn Torino, Elect & Telecommun Dept, Turin, Italy

来源：

2019 15TH CONFERENCE ON PHD RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) | 2019年

关键词：

Stacked-FET; Doherty; power amplifier; Ka-band; GaN; silicon; MMIC; DESIGN;

D O I：

10.1109/prime.2019.8787766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an innovative stacked-FET cell useful to enhance both, gain and output power of RF and mm-wave power amplifiers. The new structure has been validated through the design of a downlink Ka-band Doherty Power Amplifier. The resulting module is a two stages Microwave Monolithic Integrated Circuit (MMIC) fabricated on a commercial 100nm gate length Gallium nitride on Silicon technology. The design was carried out to satisfy not only the power requirements but also to meet the thermal constraints for space use. Simulation results have shown a power added efficiency (PAE) greater of 30% at 6dB of output power back-off with a peak of output power of 38dBm inside the operative band, from 17.3 GHz to 20.3 GHz. Whereas, a saturated gain above 17dB has been achieved with a gain flatness better than 0.5dB in the overall band. The chip area is 5x3.7mm(2).

引用

页码：165 / 168

页数：4

共 50 条

[31] Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper
Piacibello, Anna
Camarchia, Vittorio
ELECTRONICS, 2022, 11 (01)
[32] Ka-Band 12W Asymmetric Doherty PA GaN MMIC
Collins, Gayle
2023 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS, INMMIC, 2023,
[33] Development of a Highly Linear Ka-band Power Amplifier Using Second Harmonic Injection Linearization
Nguyen, Duy P.
Thuy Nguyen
Anh-Vu Pham
2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2016, : 835 - 838
[34] Design of Ka-Band Doherty Power Amplifier Using 0.15 μm GaN on SiC Process Based on Novel Complex Load Modulation
Zhou, Xinyu
Chowdhury, Srabanti
Martinez, Rafael Perez
Shankar, Bhawani
2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2021, : 259 - 262
[35] A Ka-band 33 dBm Stacked Power Amplifier Cell in 100 nm GaN-on-Si Technology
Ramella, Chiara
Pirola, Marco
Colantonio, Paolo
2020 23RD INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON 2020), 2020, : 204 - 208
[36] A Ka-band power amplifier with filtering characteristic for satellite communication
Xie, Heng
Liu, Qiushi
Song, Bai
Fan, Yong
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2020, 62 (02) : 576 - 580
[37] A Ka-band Low Power and High-Efficiency Differential Power Amplifier in 0.25-μm BiCMOS
Balducci, Marco
Schumacher, Hermann
Chartier, Sebastien
PROCEEDINGS OF 2017 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC 2017), 2017,
[38] Linearization of stacked-fet RF CMOS power amplifier using diode-integrated bias circuit
Kong, Jeongwoon
Jeong, Jinho
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2013, 55 (05) : 1011 - 1014
[39] A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI
Zhang, Jian
Wang, Dawei
Zhu, Wei
Zhai, Ming
Yi, Xiangjie
Wang, Yan
IEEE SOLID-STATE CIRCUITS LETTERS, 2024, 7 : 147 - 150
[40] Ka-band wideband power amplifier MMIC using capacitive coupled matching structure
Lin Hao-Dong
Liu Yu
Dong Jun
Yuan Ye
Yang Tao
Xie Xiao-Qiang
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2016, 35 (05) : 529 - 533

← 1 2 3 4 5 →