An Influence of Polyelectrolyte Layer on Electrophysical Properties of MIS Structures

被引：0

作者：

Gorin, Dmitry A. ^{[1
]}

Yaschenok, Alexey M. ^{[1
]}

Manturov, Alexey O. ^{[2
]}

Klimov, Boris N. ^{[1
]}

机构：

[1] Saratov NG Chernyshevskii State Univ, Saratov, Russia

[2] Saratov State Tech Univ, Saratov, Russia

来源：

2009 INTERNATIONAL SCHOOL AND SEMINAR ON MODERN PROBLEMS OF NANOELECTRONICS, MICRO- AND NANOSYSTEM TECHNOLOGIES | 2009年

关键词：

Polyelectrolyte layers; resistance; MIS structure; surface; silicon; MAGNETITE NANOPARTICLES; MULTILAYER FILMS; DEPOSITION; MONOLAYERS; POLYMER;

D O I：

10.1109/INTERNANO.2009.5335636

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

An influence of polyelectrolyte layers on electrophysical properties of structures metal-insulator-semiconductor (MIS) under its adsorption on the surface of single crystal silicon is shown. Deposition of polyelectrolyte layers on the surface of single crystal silicon leads to change of the resistance of MIS structure. Deposition of polyethylene imine lead to decreasing the resistance of structure whereas following deposition of polystyrene sodium sulfonate and increasing the number of adsorbed polyelectrolyte layers leads to increasing of resistance of MIS structure.

引用

页码：50 / 52

页数：3

共 21 条

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