Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(100) substrate

被引：5

作者：

Noh, Y. K.

Park, S. R.

Kim, M. D.

Kwon, Y. J.

Oh, J. E.

Kim, Y. H.

Lee, J. Y.

Kim, S. G.

Chung, K. S.

Kim, T. G.

机构：

[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[2] Hanyang Univ, Div Elect & Comp Engn, Ansan 426791, Kunggi, South Korea

[3] Korea Adv Inst Sci & Technol, Dept Mat Sci, Taejon 305701, South Korea

[4] Korea Adv Inst Sci & Technol, Engn Electron Microscopy Lab, Taejon 305701, South Korea

[5] Joongbu Univ, Dept Informat & Commun, Chungnam 132940, South Korea

[6] Kyung Hee Univ, Ctr Informat Display, Dept Elect Mat Res, Yongin 449701, Kyunggi, South Korea

[7] Korea Univ, Dept Elect & Comp Engn, Seoul 136701, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

关键词：

atomic force microscopy; reflection high-energy electron diffraction; molecular beam epitaxy; antimonides; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2006.11.187

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of AlSb quantum dots (QDs) on Si(1 0 0) substrates by molecular beam epitaxy (MBE) was investigated using reflection high-energy electron diffraction and atomic force microscopy (AFM), with varying the growth rate and Sb-4/Al flux ratio. The thickness of the AlSb wetting layer (WL) was found to be independent of the Sb-4/Al flux ratio and AlSb growth rate. At 540 degrees C, the thickness of the AlSb WL was about 0.3 monolayer regardless of the growth rate and flux ratio. AFM images showed that the size and density of AlSb QDs strongly depended on the growth rate and flux ratio. These results provide important information on the formation process of AlSb QDs on Si substrates. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：244 / 247

页数：4

共 15 条

[1] Growth mechanisms of highly mismatched AlSb on a Si substrate [J].