Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise

被引：14

作者：

Abe, Kenichi ^{[1
]}

Teramoto, Akinobu ^{[2
]}

Watabe, Shunichi ^{[1
]}

Fujisawa, Takafumi ^{[1
]}

Sugawa, Shigetoshi ^{[1
]}

Kamata, Yutaka ^{[4
]}

Shibusawa, Katsuhiko ^{[4
]}

Ohmi, Tadahiro ^{[2
,3
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan

[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan

[3] Tohoku Univ, WPI Res Ctr, Sendai, Miyagi 9808579, Japan

[4] OKI Semicond Miyagi Co Ltd, Ohira, Miyagi 9813693, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

THRESHOLD VOLTAGE FLUCTUATION; PARAMETER FLUCTUATIONS; DECANANOMETER MOSFETS; STATISTICAL VARIATION; TRAPS; EDGE;

D O I：

10.1143/JJAP.49.04DC07

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Random telegraph signal (RTS) noise has become one of the most important problems in the continuous scaling down of field-effect transistors (FETs). In this study, we investigate experimentally the relationship between RTS amplitude and channel doping concentration (NA), which is a key parameter related to threshold voltage adjustment and short-channel effects, in 393,216 n-type FETs by a high-speed measurement method. We demonstrate that NA has a significant effect on RTS amplitude even at approximately the same interface and bulk trap densities of the gate insulator films, which are evaluated by the charge pumping method, by the quasi-static capacitance-voltage method, and on the basis of 1/f noise characteristics. An increase in RTS amplitude may arise from a more advanced channel nonuniformity as NA increases. (C) 2010 The Japan Society of Applied Physics

引用

页数：5

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