High quality factor cold sintered LiF ceramics for microstrip patch antenna applications

被引:77
作者
Liu, Bing [1 ,2 ]
Sha, Ke [1 ]
Jia, Ying Qiang [2 ]
Huang, Yu Hui [2 ]
Hu, Cheng Chao [3 ]
Li, Lei [2 ]
Wang, Da Wei [4 ]
Zhou, Di [5 ]
Song, Kai Xin [1 ]
机构
[1] Hangzhou Dianzi Univ, Coll Elect Informat & Engn, Hangzhou, Peoples R China
[2] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou, Peoples R China
[3] Liaocheng Univ, Coll Mat Sci & Engn, Liaocheng, Shandong, Peoples R China
[4] Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen, Peoples R China
[5] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Xian, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
Fluoride; Cold sintering; Microwave dielectric properties; Microstrip patch antenna; MICROWAVE DIELECTRIC-PROPERTIES; TEMPERATURE; GLASS; DENSIFICATION;
D O I
10.1016/j.jeurceramsoc.2021.03.052
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Cold sintering is adopted to pre-densify LiF ceramics, where the relative density increases significantly from 72.1 % at 125 MPa to 88.9 % at 500 MPa. The following post-annealings at 800 ?C lead to further optimizations of densification, and near-full densifications with relative densities of 95.6 % and 97.6 % are achieved at 375 and 500 MPa, respectively. Qf value increased with increasing uniaxial pressure until it reaches the maximum value of 134,050 GHz at 375 MPa, which is 1.82 times higher than that via conventional sintering (73,800 GHz). ?r and ?f are mainly determined by the relative density, and the optimum microwave dielectric properties are obtained as follows: ?r = 8.45, Qf =134,050 GHz, ?f =?135 ppm/?C. A microstrip patch antenna is designed and fabricated using the LiF ceramic as the substrate, which gives an S11 of ?20.3 dB, a simulated high efficiency of 90.5 %, and a gain of 4.25 dB at the resonant frequency of 6.81 GHz.
引用
收藏
页码:4835 / 4840
页数:6
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