High-resolution photoemission mapping of the three-dimensional band structure of Bi(111) -: art. no. 245122

被引:23
|
作者
Ast, CR [1 ]
Höchst, H [1 ]
机构
[1] Univ Wisconsin, Ctr Synchrotron Radiat, Stoughton, WI 53589 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.70.245122
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Angle-resolved photoemission spectra of Bi(111) excited with synchrotron radiation at photon energies from 9 to 100 eV have been used to determine the initial- and final-state band structures along GammaT. Deviations from the free-electron dispersion for energies below about 60 eV can be accounted for by an energy-dependent extension function to the final-state bands. The experimentally determined dispersion of the top three bulk valence bands is compared with literature data and various band-structure calculations, none of which satisfactorily describes the observed band width, the critical-point energies, or their specific dispersion relations E-i(k). At a photon energy of 29 eV, direct transitions lead to a pronounced final-state gap. In this region, the experimental band-structure map consists of features resembling the one-dimensional density-of-states projection of the Bi bulk band structure onto the (111) surface.
引用
收藏
页码:1 / 8
页数:8
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