High-resolution photoemission mapping of the three-dimensional band structure of Bi(111) -: art. no. 245122

被引:23
作者
Ast, CR [1 ]
Höchst, H [1 ]
机构
[1] Univ Wisconsin, Ctr Synchrotron Radiat, Stoughton, WI 53589 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.70.245122
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Angle-resolved photoemission spectra of Bi(111) excited with synchrotron radiation at photon energies from 9 to 100 eV have been used to determine the initial- and final-state band structures along GammaT. Deviations from the free-electron dispersion for energies below about 60 eV can be accounted for by an energy-dependent extension function to the final-state bands. The experimentally determined dispersion of the top three bulk valence bands is compared with literature data and various band-structure calculations, none of which satisfactorily describes the observed band width, the critical-point energies, or their specific dispersion relations E-i(k). At a photon energy of 29 eV, direct transitions lead to a pronounced final-state gap. In this region, the experimental band-structure map consists of features resembling the one-dimensional density-of-states projection of the Bi bulk band structure onto the (111) surface.
引用
收藏
页码:1 / 8
页数:8
相关论文
共 28 条
[1]  
[Anonymous], 2003, SOLID STATE PHOTOEMI
[2]   The GW method [J].
Aryasetiawan, F ;
Gunnarsson, O .
REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (03) :237-312
[3]   Momentum-dependent energy losses in core level photoemission spectra of poorly conducting metals -: art. no. 197602 [J].
Ast, CR ;
Höchst, H .
PHYSICAL REVIEW LETTERS, 2003, 91 (19)
[4]  
Ast CR, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.125103
[5]   Electronic structure of a bismuth bilayer -: art. no. 113102 [J].
Ast, CR ;
Höchst, H .
PHYSICAL REVIEW B, 2003, 67 (11) :4
[6]   NECESSITY OF RELATIVISTIC DIPOLE SELECTION-RULES IN PHOTOEMISSION [J].
BORSTEL, G ;
NEUMANN, M ;
WOHLECKE, M .
PHYSICAL REVIEW B, 1981, 23 (07) :3121-3124
[7]   Electronic band structure of ordered Cu3Au:: An angle-resolved photoemission study along the [001] direction [J].
Courths, R ;
Löbus, S ;
Halilov, S ;
Scheunemann, T ;
Gollisch, H ;
Feder, R .
PHYSICAL REVIEW B, 1999, 60 (11) :8055-8066
[8]   ELECTRONS IN BISMUTH [J].
EDELMAN, VS .
ADVANCES IN PHYSICS, 1976, 25 (06) :555-613
[9]   Role of bulk and surface phonons in the decay of metal surface states -: art. no. 066805 [J].
Eiguren, A ;
Hellsing, B ;
Reinert, F ;
Nicolay, G ;
Chulkov, EV ;
Silkin, VM ;
Hüfner, S ;
Echenique, PM .
PHYSICAL REVIEW LETTERS, 2002, 88 (06) :66805/1-66805/4
[10]   BAND STRUCTURE OF BISMUTH - PSEUDOPOTENTIAL APPROACH [J].
GOLIN, S .
PHYSICAL REVIEW, 1968, 166 (03) :643-&