Staircase band gap Si1-xGex/Si photodetectors

被引：9

作者：

Lo, ZY ^{[1
]}

Jiang, RL ^{[1
]}

Zheng, YD ^{[1
]}

Zang, L ^{[1
]}

Chen, ZZ ^{[1
]}

Zhu, SM ^{[1
]}

Cheng, XM ^{[1
]}

Liu, XB ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 10期

关键词：

D O I：

10.1063/1.1286958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated Si1-xGex/Si photodetectors by using a staircase band gap Si1-xGex/Si structure. These devices exhibit a high optical response with a peak responsive wavelength at 0.96 mu m and a responsivity of 27.8 A/W at -5 V bias. Excellent electrical characteristics evidenced by good diode rectification are also demonstrated. The dark current density is 0.1 pA/mu m(2) at -2 V bias, and the breakdown voltage is -27 V. The high response is explained as the result of a staircase band gap by theoretical analysis. (C) 2000 American Institute of Physics. [S0003-6951(00)04528-9].

引用

页码：1548 / 1550

页数：3

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